| PART |
Description |
Maker |
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| APT100GF60LR APT100GF60B2R |
Fast IGBT 600V 100A
The Fast IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT20GF120KR |
Fast IGBT 1200V 32A
The Fast IGBT is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| MEO500-06DA |
600V fast recovery epitaxial diode (FRED) module
Fast Recovery Epitaxial Diode (FRED) Module(姝ｅ??垫?514A??揩???澶??寤跺?浜??绠℃ā??
|
IXYS[IXYS Corporation]
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| DSEK60 L236 DSEK60-06A |
Fast Recovery Diodes
Common Cathode Fast Recovery Epitaxial Diode (FRED)
|
IXYS[IXYS Corporation]
|
| DSEI12-10A DSEI12 |
Fast Recovery Diodes
Fast Recovery Epitaxial Diode (FRED)(正向电流12A的快速恢复外延型二极
|
IXYS Corporation
|
| DSEI2X30 DSEI2X30-12B DSEI2X31-12B DSEI2X31 DSEI2X |
Fast Recovery Diodes
FAST RECOVERY EPITAXIAL DIODE (FRED)
|
IXYS Corporation
|
